SI4450DY |
RFQ for SI4450DY Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| SI4450DY | - | 2006 | 50000 |
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Typical Application |
Features |
| • DC/DC converter• Load switch• Motor drives | • 8 A, 60 V. RDS(on) = 0.020 @ VGS = 10 V RDS(on) = 0.025 @ VGS = 6 V.• Low gate charge (30nC typical).• Fast switching speed.• High performance trench technology for extremely low RDS(ON).• High power and current handling capability. |
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain-Source Voltage | 60 | V |
| VGSS | Gate-Source Voltage | ±20 | V |
| ID | Drain Current - Continuous (Note 1a) - Pulsed |
8 | A |
| 50 | |||
| PD | Power Dissipation for Single Operation (Note 1a (Note 1b) (Note 1c) |
2.5 | W |
| 1.2 | |||
| 1 | |||
| TJ, Tstg | Operating and Storage Junction Temperature Range | -55 to +150 | °C |
